Selective etching of 10 MHz repetition rate fs-laser inscribed tracks in YAG

We investigated fs-laser structuring of YAG crystals at high writing velocities up to 100 mm/s using a commercial 10 MHz system supplied by Coherent Inc. and selective etching these structures for fabrication ultrahigh aspect ratio microchannels. Usage diluted acid mixture 22% H 3 PO 4 24% 2 SO accelerated the process significantly an parameter D 11.2 μm /s, which is three times higher than previously reported. Additionally, selectivity was increased order magnitude.